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Proceedings Paper

Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots
Author(s): E. I. Gatskevich; G. D. Ivlev; V. A. Volodin; A. V. Dvurechenskii; M. D. Efremov; A. I. Nikiforov; A. I. Yakimov
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Paper Abstract

The investigation of nanosecond ruby laser impact on Ge/Si heterostructures with GexSi1-x quantum dots (QD's) has been carried out. Both energy density in pulse and number of pulses changed. Raman spectroscopy was used to study the nanocluster states before and after laser irradiation. The method for control of composition and strain in Ge-Si based quantum dots was essentially improved.

Paper Details

Date Published: 31 July 2007
PDF: 5 pages
Proc. SPIE 6728, ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures, 67281U (31 July 2007); doi: 10.1117/12.752381
Show Author Affiliations
E. I. Gatskevich, Institute of Electronics (Belarus)
G. D. Ivlev, Institute of Electronics (Belarus)
V. A. Volodin, Institute of Semiconductor Physics (Russia)
A. V. Dvurechenskii, Institute of Semiconductor Physics (Russia)
M. D. Efremov, Institute of Semiconductor Physics (Russia)
A. I. Nikiforov, Institute of Semiconductor Physics (Russia)
A. I. Yakimov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 6728:
ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures

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