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Proceedings Paper

Damage threshold of sapphire in short and long pulse regime
Author(s): B. Bussière; F. Canova; J.-P. Chambaret; P. Delaporte; T. Itina; M. Sentis
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Paper Abstract

The work presents the determination of the laser-induced damage threshold (LIDT) fluence of sapphire under various experimental conditions concerning the material irradiation (fs, ps and ns temporal regimes) and material preparation (surface state). The results may be used for optimising laser micromachining processes and also for studying laser crystal damage in high peak power femtosecond Ti:Sapphire laser chains.

Paper Details

Date Published: 28 June 2007
PDF: 9 pages
Proc. SPIE 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies, 67321P (28 June 2007); doi: 10.1117/12.752215
Show Author Affiliations
B. Bussière, LP3, CNRS, Univ. de la Méditerranée (France)
Amplitude Technologies (France)
F. Canova, LOA, ENSTA, Ecole Polytechnique (France)
J.-P. Chambaret, LOA, ENSTA, Ecole Polytechnique (France)
P. Delaporte, LP3, CNRS, Univ. de la Méditerranée (France)
T. Itina, LP3, CNRS, Univ. de la Méditerranée (France)
M. Sentis, LP3, CNRS, Univ. de la Méditerranée (France)


Published in SPIE Proceedings Vol. 6732:
International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies

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