Share Email Print
cover

Proceedings Paper

Simulation of the dynamics of phase transitions in CdSe induced by irradiation with nanosecond pulses of an excimer laser
Author(s): S. P. Zhvavyi; G. L. Zykov
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A numerical simulation of the dynamics of melting and crystallization processes induced in cadmium selenide by radiation of the KrF excimer laser (&lgr; = 248 nm, &tgr; = 20 ns) was carried out taking into account the components evaporation from the surface and their diffusion in the melt. It is shown that intensive components evaporation from the surface results in the formation of nonmonotone temperature profile with maximum temperature at a depth of about 5 - 15 nm. As a result, melt formed in the semiconductor volume extends both to the surface and to the depth of sample. After termination of the laser radiation enrichment of the surficial region by selenium is equals ~ 0.51.

Paper Details

Date Published: 28 June 2007
PDF: 6 pages
Proc. SPIE 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies, 67321I (28 June 2007); doi: 10.1117/12.752195
Show Author Affiliations
S. P. Zhvavyi, Institute of Electronics (Belarus)
G. L. Zykov, Institute of Electronics (Belarus)


Published in SPIE Proceedings Vol. 6732:
International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies

© SPIE. Terms of Use
Back to Top