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Proceedings Paper

Theoretical treatment of the first-order hyper-Raman scattering in semiconductors
Author(s): L. E. Semenova; K. A. Prokhorov
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Paper Abstract

The hyper-Raman scattering by LO phonons is theoretically investigated, taking into account the Wannier excitons as intermediate virtual states. The different scattering mechanisms are considered. The hyper-Raman efficiency as a function of the energy of incident photons is calculated for ZnSe, ZnO, CdS and GaN.

Paper Details

Date Published: 27 July 2007
PDF: 6 pages
Proc. SPIE 6729, ICONO 2007: Coherent and Nonlinear Optical Phenomena, 67292Q (27 July 2007); doi: 10.1117/12.751979
Show Author Affiliations
L. E. Semenova, A.M. Prokhorov General Physics Institute (Russia)
K. A. Prokhorov, A.M. Prokhorov General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 6729:
ICONO 2007: Coherent and Nonlinear Optical Phenomena

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