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Proceedings Paper

New physical features of semiconductor lasers at superhigh excitation levels
Author(s): A. V. Lyutetskiy; N. A. Pikhtin; S. O. Slipchenko; Z. N. Sokolova; A. L. Stankevich; D. A. Vinokurov; K. S. Borschev; I. S. Tarasov
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Paper Abstract

Investigations of stimulated recombination processes and reasons of output optical power saturation at superhigh pump levels (up to 0.1 MA/cm2) of semiconductor lasers based on wide variety of quantum well heterostructures (&lgr;=980- 1900 nm) are presented for the first time.

Paper Details

Date Published: 9 August 2007
PDF: 3 pages
Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 673104 (9 August 2007); doi: 10.1117/12.751854
Show Author Affiliations
A. V. Lyutetskiy, Ioffe Physico-Technical Institute (Russia)
N. A. Pikhtin, Ioffe Physico-Technical Institute (Russia)
S. O. Slipchenko, Ioffe Physico-Technical Institute (Russia)
Z. N. Sokolova, Ioffe Physico-Technical Institute (Russia)
A. L. Stankevich, Ioffe Physico-Technical Institute (Russia)
D. A. Vinokurov, Ioffe Physico-Technical Institute (Russia)
K. S. Borschev, Voronezh State Univ. (Russia)
I. S. Tarasov, Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6731:
International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems

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