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Proceedings Paper

Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
Author(s): K. S. Borschev; N. A. Pikhtin; S. O. Slipchenko; Z. N. Sokolova; D. A. Vinokurov; I. N. Arsentyev; I. S. Tarasov
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Paper Abstract

Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.

Paper Details

Date Published: 9 August 2007
PDF: 5 pages
Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 673103 (9 August 2007); doi: 10.1117/12.751770
Show Author Affiliations
K. S. Borschev, Voronezh State Univ. (Russia)
N. A. Pikhtin, Ioffe Physico-Technical Institute (Russia)
S. O. Slipchenko, Ioffe Physico-Technical Institute (Russia)
Z. N. Sokolova, Ioffe Physico-Technical Institute (Russia)
D. A. Vinokurov, Ioffe Physico-Technical Institute (Russia)
I. N. Arsentyev, Ioffe Physico-Technical Institute (Russia)
I. S. Tarasov, Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6731:
International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems

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