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Proceedings Paper

Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing
Author(s): Thomas Faure; Emily E. Gallagher; Louis Kindt; Steven Nash; Ken Racette; Richard Wistrom; Toru Komizo; Yasutaka Kikuchi; Satoru Nemoto; Yushin Sasaki; Atsushi Kominato; Toshiyuki Suzuki
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Paper Abstract

As optical lithography is extended for use in manufacturing 45 nm devices, it becomes increasingly important to maximize the lithography process window and enable the largest depth of focus possible at the wafer stepper. Consequently it is very important that the reticles used in the wafer stepper be as flat as possible. The ITRS roadmap requirement for mask flatness for 45 nm node is 250 nm. To achieve this very tight reticle flatness requirement, the stress of each film present on the mask substrate must be minimized. Another key reticle specification influenced by film stress on the mask blank is image placement. In this paper, we will describe the development and detailed characterization of a new low stress Molybdenum Silicide (MoSi) film for use in manufacturing 45 nm node critical level attenuated phase shift masks to be used in 193 nm immersion lithography. Data assessing and comparing the cleaning durability, mask flatness, image placement, Critical Dimension (CD) performance, dry etch properties, phase performance, and defect performance of the new low stress MoSi film versus the previous industry standard A61A higher stress MoSi attenuator film will be described. The results of our studies indicate that the new low stress MoSi film is suitable for 45 nm mask manufacturing and can be introduced with minimal changes to the mask manufacturing process.

Paper Details

Date Published: 30 October 2007
PDF: 12 pages
Proc. SPIE 6730, Photomask Technology 2007, 67300C (30 October 2007); doi: 10.1117/12.748664
Show Author Affiliations
Thomas Faure, IBM Systems and Technology Group (United States)
Emily E. Gallagher, IBM Systems and Technology Group (United States)
Louis Kindt, IBM Systems and Technology Group (United States)
Steven Nash, IBM Systems and Technology Group (United States)
Ken Racette, IBM Systems and Technology Group (United States)
Richard Wistrom, IBM Systems and Technology Group (United States)
Toru Komizo, Toppan Electronics, Inc. (United States)
Yasutaka Kikuchi, Toppan Electronics, Inc. (United States)
Satoru Nemoto, Toppan Electronics, Inc. (United States)
Yushin Sasaki, Toppan Electronics, Inc. (United States)
Atsushi Kominato, HOYA Corp. (Japan)
Toshiyuki Suzuki, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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