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Proceedings Paper

Correction technique of EBM-6000 prepared for EUV mask writing
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Paper Abstract

Image placement (IP) errors caused by electro-static chuck (ESC) and non-flatness of mask are additional factors in writing extreme ultra-violet (EUV) mask, and minimizing their influences is being fervently addressed. New correction technique of EBM-6000 has been developed for EUV mask writing based on the conventional grid matching correction (GMC) without ESC to obtain good reproducibility to satisfy user's requirement to develop EUV mask at an early stage.

Paper Details

Date Published: 30 October 2007
PDF: 11 pages
Proc. SPIE 6730, Photomask Technology 2007, 673030 (30 October 2007); doi: 10.1117/12.747748
Show Author Affiliations
Shusuke Yoshitake, NuFlare Technology Inc. (Japan)
Hitoshi Sunaoshi, NuFlare Technology Inc. (Japan)
Jun Yashima, NuFlare Technology Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology Inc. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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