Share Email Print

Proceedings Paper

Development of EUV mask fabrication process using Ru capping blank
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Extreme Ultra Violet Lithography (EUVL) is considered to be a major candidate for the Next Generation Lithography. To achieve reflective optics, EUV mask consists of absorber layer, reflective multilayer (ML) with protection capping layer. Buffer layer can be used for silicon capped EUV blanks to enhance the etch selectivity against absorber etching. It has been reported that Ruthenium (Ru) material has better property on oxidation resistance compared to standard silicon (Si) capping layer. Ru capping layers have advantage for its high etch selectivity, which enables buffer layer free EUV mask structure. However, thin Ru layers should be designed due to high EUV absorption property. This paper includes the evaluation of current process performance of Ta-based absorber process on Ru capped ML blanks. It also includes resist patterning by EB writing, Ru capping layer etch effect as well as absorber patterning with CD uniformity, linearity, Line Edge Roughness (LER) and selectivity between absorber and resist or Ru capping layer. Inspection result is also included as a recent result.

Paper Details

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 67305N (30 October 2007); doi: 10.1117/12.747722
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Kosuke Ishikiriyama, Intel Corp. (Japan)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

© SPIE. Terms of Use
Back to Top