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Proceedings Paper

Effects of exposure environment on pellicle degradation in ArF lithography
Author(s): Hyungseok Choi; Yohan Ahn; Jeongin Yoon; Yangkoo Lee; Yongjhin Cho; Jongann Kim
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Paper Abstract

With the introduction of ArF laser, its high photon energy affects the pellicle degradation in direct. The components outgassed from the damaged pellicle have the effect on the CD variation of reticle. In order to resolve this new inevitable problem, the method of dry gas purge has been proposed among the various solutions recently. Dry gas purge method is generally applied to two applications. It can be applied to a storage environment such as reticle stocker, reticle SMIF pod and reticle library in scanner and to the exposure chamber inside of a scanner during ArF laser exposure phase directly. In this case, it is quite important technologically that which gas is determined as dry purge gas, pure nitrogen or CDA (clean dry air). In this study, the effects of exposure environment on pellicle degradation according to dry purge gas and their mechanism has been investigated to propose strategies and solutions of dry gas purge technology.

Paper Details

Date Published: 30 October 2007
PDF: 6 pages
Proc. SPIE 6730, Photomask Technology 2007, 67300B (30 October 2007); doi: 10.1117/12.746857
Show Author Affiliations
Hyungseok Choi, Samsung Electronics Co., Ltd. (South Korea)
Yohan Ahn, Samsung Electronics Co., Ltd. (South Korea)
Jeongin Yoon, Samsung Electronics Co., Ltd. (South Korea)
Yangkoo Lee, Samsung Electronics Co., Ltd. (South Korea)
Yongjhin Cho, Samsung Electronics Co., Ltd. (South Korea)
Jongann Kim, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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