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Proceedings Paper

Investigation of resist effects on EUV mask defect printability
Author(s): Zhiyu Zhang; Ted Liang
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Paper Abstract

In this paper, we report our recent investigations into the effect of resist processing on defect printability. Simulations are conducted using both aerial image threshold and resist models in an attempt to determine the effect of the resist process. There is good agreement between the resist model simulation and the printing data obtained using the EUV micro exposure tool (MET) and a programmed defect mask. The CD error, or defect printability, introduced by edge defects on 70nm semi-iso lines predicted by the aerial image threshold model is larger than that by both the resist model and the actual printing results. However, this favorable difference vanishes for edge defects on 30nm lines. Mask error enhancement factor (MEEF) is used to understand the discrepancy between the aerial image threshold model and the resist model. Image quality measured by normalized image log slope (NILS) and resist process window characterized by exposure latitude are closely related to image MEEF and resist MEEF respectively, and ultimately determine defect printability for a given patterning and resist processing. Defect printability increases exponentially as the feature size shrinks. This nonlinear behavior presents a challenge for defining defect specifications for EUV lithography based on extrapolations from currently available printing data.

Paper Details

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 673016 (30 October 2007); doi: 10.1117/12.746707
Show Author Affiliations
Zhiyu Zhang, Intel Corp. (United States)
Ted Liang, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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