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Proceedings Paper

Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning
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Paper Abstract

To fulfill Moore's law the R&D stage of 3x nm HP nodes will have to be reached in 2008. Conventional DUV immersion technology is resolution limited to half pitch values exceeding 40 nm. Double Patterning Technology (DPT) is a major candidate to reach the 3x nm node in time. Geometrical pattern split, doubling the pitch, is one of the major steps of DPT. We present a feasibility study of the Rule Based (RB) DPT approach to pattern splitting based on a representative and reviewed selection of clips and full-mask designs.

Paper Details

Date Published: 16 November 2007
PDF: 7 pages
Proc. SPIE 6730, Photomask Technology 2007, 67301L (16 November 2007); doi: 10.1117/12.746689
Show Author Affiliations
Anton van Oosten, ASML Netherlands B.V. (Netherlands)
Peter Nikolsky, ASML Netherlands B.V. (Netherlands)
Judy Huckabay, Cadence Design Systems (United States)
Ronald Goossens, ASML MaskTools Inc. (United States)
Robert Naber, Cadence Design Systems (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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