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Proceedings Paper

Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond
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Paper Abstract

The decreasing feature sizes as induced by the ITRS have a growing impact on the cost of current and future photolithographic masks. The assessment, repair and repair validation of these expensive masks has become a very substantial factor of the total mask production cost. The introduction of immersion lithography and the proposed introduction of double exposure strategies will further amplify this trend. In order to make the whole procedure more manageable in a production environment, with its constraints on timing and resource allocation, a seamless workflow of the repair and validation procedure is sought. A proposed way to achieve this is the set up of a dedicated tool set with a backbone infrastructure designed for this workflow as well as for the specific high resolution task. In this paper we concentrate on masks with feature sizes relevant for the 45nm node and defects with typical size and shape as they appear in production. Phase shifting masks with synthetic defects have been manufactured and the printability of the defects is analyzed with an AIMSTM45-193i. In part the defect outline and three-dimensional shape as well as further characteristics have been visualized with an electron microscope, prior to repairing them with an electron beam based repair system. In addition we will show the behaviour of the phase of the mask in a region of interest, that is in this case the repair area and its immediate vicinity. This will be done by a special new tool, named Phame®, developed for measuring the actual phase of smallest mask features with a high spatial resolution. In the conclusion we will give an outlook how the proposed workflow and the how the employed technologies will influence the masks that are expected to emerge for the 32nm node.

Paper Details

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 67301Z (30 October 2007); doi: 10.1117/12.746666
Show Author Affiliations
Christian Ehrlich, Carl Zeiss SMS GmbH (Germany)
Ute Buttgereit, Carl Zeiss SMS GmbH (Germany)
Klaus Boehm, Carl Zeiss SMS GmbH (Germany)
Thomas Scheruebl, Carl Zeiss SMS GmbH (Germany)
Klaus Edinger, Nawotec GmbH (Germany)
Tristan Bret, Nawotec GmbH (Germany)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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