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Proceedings Paper

Performance improvement of ALTA4700 for 130nm and below mask productivity
Author(s): Jyh Wei Hsu; David Lee; Chen Rui Tseng; Eric Hong; Chun Hung Wu
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Paper Abstract

ALTA4700 DUV laser pattern generator employs chemical amplified resist to get better resolution. The capability of ALTA4700 for 130nm technology node mask production is obviously. Further improvement on ALTA4700 was performed to meet the state-of-the-art mask requirement. System optimization eliminates unusual critical dimension (CD) points and then reduces the range of uniformity. Appropriate post-exposure baking (PEB) temperature gets larger mask printing window and better CD linearity. ALTA4700 incorporate NTAR7 blank with particular dry etch recipe, the mask CD uniformity reduced from 25 to 15nm (range). Good Cr layer profile also obtains.

Paper Details

Date Published: 30 October 2007
PDF: 7 pages
Proc. SPIE 6730, Photomask Technology 2007, 67300I (30 October 2007); doi: 10.1117/12.746654
Show Author Affiliations
Jyh Wei Hsu, Taiwan Mask Corp. (Taiwan)
David Lee, Taiwan Mask Corp. (Taiwan)
Chen Rui Tseng, Taiwan Mask Corp. (Taiwan)
Eric Hong, Taiwan Mask Corp. (Taiwan)
Chun Hung Wu, Taiwan Mask Corp. (Taiwan)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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