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Proceedings Paper

Requirements of photomask registration for the 45nm node and beyond: Is it possible?
Author(s): Jin Choi; Hee Bom Kim; Sang Hee Lee; Dong Hun Lee; Hae Young Jeong; Jeung Woo Lee; Byung Gook Kim; Sang-Gyun Woo; Han Ku Cho
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Paper Abstract

As semiconductor features shrink in size and pitch, the pattern placement error at photomask, that is, the registration becomes more important factor to be reduced. Following ITRS roadmap, the registration for sub-45 nm node is required to be less than 5 nm but this specification still corresponds to the challengeable goal. Among several reasons to induce registration, here, we have focused on four major registration errors: e-beam positioning error, patterning effect, pellicle attachment effect, and sampling error of measurement. We quantify and analyze each error with the help of finite element modeling and by experiment. Based on these results, we present the current status and the goal of each error for the roadmap of sub-45 nm node.

Paper Details

Date Published: 30 October 2007
PDF: 10 pages
Proc. SPIE 6730, Photomask Technology 2007, 67301O (30 October 2007); doi: 10.1117/12.746571
Show Author Affiliations
Jin Choi, Samsung Electronics Co., Ltd. (South Korea)
Hee Bom Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang Hee Lee, Samsung Electronics Co., Ltd. (South Korea)
Dong Hun Lee, Samsung Electronics Co., Ltd. (South Korea)
Hae Young Jeong, Samsung Electronics Co., Ltd. (South Korea)
Jeung Woo Lee, Samsung Electronics Co., Ltd. (South Korea)
Byung Gook Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han Ku Cho, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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