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Proceedings Paper

New method of contour-based mask-shape compiler
Author(s): Ryoichi Matsuoka; Akiyuki Sugiyama; Akira Onizawa; Hidetoshi Sato; Yasutaka Toyoda
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Paper Abstract

We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

Paper Details

Date Published: 30 October 2007
PDF: 12 pages
Proc. SPIE 6730, Photomask Technology 2007, 67300M (30 October 2007); doi: 10.1117/12.746559
Show Author Affiliations
Ryoichi Matsuoka, Hitachi High-Technologies Corp. (Japan)
Akiyuki Sugiyama, Hitachi High-Technologies Corp. (Japan)
Akira Onizawa, Hitachi High-Technologies Corp. (Japan)
Hidetoshi Sato, Hitachi High-Technologies Corp. (Japan)
Yasutaka Toyoda, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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