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Proceedings Paper

EUV mask substrate flatness improvement by laser irradiation
Author(s): Kiwamu Takehisa; Jun Kodama; Haruhiko Kusunose
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Paper Abstract

We demonstrate a new technique for improvement of the flatness of the EUV mask substrate by using a pulsed laser. Laser pulses from an ArF excimer laser were focused inside a quartz mask substrate to make spots. Experiments showed that the substrate surface was locally swelled out where spots were formed just beneath the surface without making any damages on the surface. This surface shape control technique can be applied to the final adjustment of the substrate flatness control since no cleaning process is necessary afterward.

Paper Details

Date Published: 30 October 2007
PDF: 5 pages
Proc. SPIE 6730, Photomask Technology 2007, 67305I (30 October 2007); doi: 10.1117/12.746537
Show Author Affiliations
Kiwamu Takehisa, Lasertec Corp. (Japan)
Jun Kodama, Lasertec Corp. (Japan)
Haruhiko Kusunose, Lasertec Corp. (Japan)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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