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Proceedings Paper

LRC techniques for improved error detection throughout the process window
Author(s): Venson Lee; Sheng-Hua Tsai; Jun Zhu; Lantian Wang; Shu-Mei Yang; Dan White
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Paper Abstract

Litho rule checking (LRC) is now an established component in the mask synthesis flow. Yet the requirements placed on LRC have grown as process complexity has increased. At 45nm and beyond, new techniques are required to thoroughly and efficiently evaluate a layout for potential lithographic problems. This paper examines new modeling and checking techniques which improve the detection of lithographic errors. For more thorough error detection across a wider range of process points, a process window technique provides checking of potential lithographic errors at nine different process points. To better detect potential pinches or bridges induced by deep sub-wavelength lithography, a technique which identifies problems regardless of orientation is used. These techniques provide more thorough checking, both better accuracy and improved runtime performance across the complete process window.

Paper Details

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 67303F (30 October 2007); doi: 10.1117/12.746439
Show Author Affiliations
Venson Lee, United Microelectronics Corp. (Taiwan)
Sheng-Hua Tsai, United Microelectronics Corp. (Taiwan)
Jun Zhu, Synopsys, Inc. (United States)
Lantian Wang, Synopsys, Inc. (United States)
Shu-Mei Yang, Synopsys, Inc. (United States)
Dan White, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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