Share Email Print

Proceedings Paper

Characterizing photomask etch processes by phase component analysis (PCA)
Author(s): Richard Wistrom; Toru Komizo; Michael Hibbs; Gary Reid
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

One of the most important parameters of Attenuated Phase Shift Masks (APSM) is the uniformity of the phase over the active area of the mask. Phase uniformity is an important component of lithographic process window stability. Typically, an APSM blank consists of a quartz substrate upon which a Molybdenum Silicide (MoSi) attenuating film and a Chromium (Cr) film have been deposited to act as a hard mask for the MoSi etch. There are many factors that contribute to phase non-uniformity of the final mask: thickness non-uniformity of the films, non-uniformity of the Cr etch and MoSi etch, and non-uniformity of the MoSi overetch into the quartz substrate. Phase of a completed mask is routinely measured, but quantifying how these individual components contribute to the overall phase non-uniformity is challenging. This report focuses on understanding how MoSi etch contributes to phase non-uniformity. Phase uniformity is compared for three different MoSi etch processes.

Paper Details

Date Published: 30 October 2007
PDF: 7 pages
Proc. SPIE 6730, Photomask Technology 2007, 673007 (30 October 2007); doi: 10.1117/12.746421
Show Author Affiliations
Richard Wistrom, IBM System and Technology Group (United States)
Toru Komizo, Toppan Electronics Inc. (United States)
Michael Hibbs, IBM System and Technology Group (United States)
Gary Reid, IBM System and Technology Group (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

© SPIE. Terms of Use
Back to Top