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Proceedings Paper

A study of precision performance and scan damage of EUV masks with the LWM9000 SEM
Author(s): Isao Yonekura; Hidemitsu Hakii; Takashi Yoshii; Yoshiyuki Negishi; Katsumi Oohira; Koichirou Kanayama; Masashi Kawashita; Yo Sakata; Keishi Tanaka
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Paper Abstract

EUV mask is a reflection-type-mask, of which film and structure are very different from those of existing masks (e.g. Cr and MoSi). LWM9000 SEM of Vistec/Advantest was used for measurement of EUV masks. Two types of EUV masks were used to investigate static and dynamic measurement precision and the impact of charge-up by e-beam irradiation during measurement. An optional function of LWM9000 SEM was used to improve static precision. Because the LWM9000 SEM uses ozone for in-situ cleaning of the work chamber, the interaction between the electron beam and ozone presence was also investigated. The EUV mask was evaluated at the EUV wavelength before and after e-beam scanning and measurements to determine any changes in reflectance.

Paper Details

Date Published: 30 October 2007
PDF: 12 pages
Proc. SPIE 6730, Photomask Technology 2007, 67305H (30 October 2007); doi: 10.1117/12.746373
Show Author Affiliations
Isao Yonekura, Toppan Printing Co., Ltd. (Japan)
Hidemitsu Hakii, Toppan Printing Co., Ltd. (Japan)
Takashi Yoshii, Toppan Printing Co., Ltd. (Japan)
Yoshiyuki Negishi, Toppan Printing Co., Ltd. (Japan)
Katsumi Oohira, Toppan Printing Co., Ltd. (Japan)
Koichirou Kanayama, Toppan Printing Co., Ltd. (Japan)
Masashi Kawashita, Toppan Printing Co., Ltd. (Japan)
Yo Sakata, Toppan Printing Co., Ltd. (Japan)
Keishi Tanaka, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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