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Proceedings Paper

Structural and photoluminescence properties of porous silicon with r.f.-sputtered thin films
Author(s): Yujuan Zhang; Zhenhong Jia
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Paper Abstract

Thin Sn films in the thickness range 0.3-2nm are deposited by r.f.-sputtering on porous silicon (PS) anodized on p-type silicon. Microstructural features of the samples before and after r.f.-tin-sputtered are investigated with scanning electron microscopy (SEM). The photoluminescence (PL) studies showed that a broad luminescence peak of PS near the 621nm region gets a reduction in intensity, and a new peak at 441nm was produced at first and then disappeared. The FTIR spectra on the PS/Sn structure revealed no major change of the native PS peaks.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678234 (19 November 2007); doi: 10.1117/12.746311
Show Author Affiliations
Yujuan Zhang, Xi'an Jiatong Univ. (China)
Zhenhong Jia, Xinjiang Univ. (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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