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Proceedings Paper

Activation experiments and quantum efficiency theory on gradient-doping NEA GaAs photocathodes
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Paper Abstract

Two gradient-doping GaAs photocathodes were designed and activated, the achieved highest integral sensitivity for the gradient-doping cathode is 2178μA/lm, which is much higher than that of uniform-doping cathode. The increase in the integral sensitivity is attributed to the electric field induced in the active layer of gradient-doping cathode. We analyze the transported mechanism of gradient-doping cathodes and solve the quantum efficiency equations of exponential-doping cathode, which is a special gradient-doping cathode with a constant induced electric field, from the one-dimensional continuity equations. According to these equations, we calculate the theoretical quantum yield of the exponential-doping cathodes, and compare the performance of exponential-doping cathodes with that of uniform-doping cathodes. The theoretical results show that the exponential-doping structure can increase the quantum yield of photocathodes evidently, for the transmission-mode cathodes the increase is even more pronounced.

Paper Details

Date Published: 19 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822R (19 November 2007); doi: 10.1117/12.745944
Show Author Affiliations
Jijun Zou, Nanjing Univ. of Science and Technology (China)
East China Institute of Technology (China)
Zhi Yang, Nanjing Univ. of Science and Technology (China)
Jianliang Qiao, Nanjing Univ. of Science and Technology (China)
Pin Gao, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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