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Proceedings Paper

Luminescence properties of Cu and Cu,Al doped ZnS quantum dots
Author(s): Xiaosong Zhang; Lan Li; Xiaoyi Dong; Guiyun Kai; Dongqing Dong; Yanfang Zhang; Jiangyong Li
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Paper Abstract

Free-standing ZnS:Cu and ZnS:Cu,Al quantum dots were prepared in the aqueous medium from readily available precursors. The construction, morphology and luminescence properties of the ZnS:Cu and ZnS:Cu,Al quantum dots were evaluated by XRD,TEM and photoluminescence spectra. The average particle size was calculated using the Scherrer formula to be 5nm, which is also observed from HRTEM image. In PL spectra, 0.7% Cu and 0.4% Cu -doped ZnS:Cu quantum dots have emission peak around 470 nm and 500 nm, which attributed to the transition from the shallow donor level (sulfur vacancy) to the e level and t2 level of Cu2+ respectively. And PL spectra of ZnS:Cu,Al quantum dots is similar with the PL of ZnS:Cu quantum dots, but the luminescence intensity of quantum dots ZnS:Cu,Al increase, which arise from that Al 3+ ions as co-activated enhance donor level.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822I (19 November 2007); doi: 10.1117/12.745742
Show Author Affiliations
Xiaosong Zhang, Tianjin Univ. of Technology (China)
Nankai University (China)
Lan Li, Tianjin Univ. of Technology (China)
Xiaoyi Dong, Nankai Univ. (China)
Guiyun Kai, Nankai Univ. (China)
Dongqing Dong, Tianjin Univ. of Technology (China)
Yanfang Zhang, Tianjin Univ. of Technology (China)
Jiangyong Li, Tianjin Univ. of Technology (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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