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Proceedings Paper

Research of photodetector and its array in standard CMOS technology
Author(s): Jiantao Bian; Xiang Cheng; Chao Chen
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Paper Abstract

Silicon photodetector is easy to be integrated with all kinds of Silicon IC to get monolithically OEIC. And the photodetector array is also widely applied. A kind of CMOS-process-compatible N+/N-Well/P-Sub photodetector and its array are analyzed in this paper. Depended on the basic time-dependent equations of photodetctor and analyzed by Laplace transform method, the intrinsic frequency response characteristic is numerically calculated. The effect of reverse bias voltage on spectral responsivity is also discussed. The photodetector is fabricated in 0.5μm CMOS process. At 780nm wavelength incident light, the measured and calculated responsivity are 0.253A/W and 0.251A/W, respectively. The variety of measured responsivity with bias voltage is about 1.8mA/(W•V). At a reverse voltage of 5V, the maximum dark current is 0.148nA. And the junction capacitance and -3dB frequency are also measured. The crosstalk factor of photodetector with PN junction isolation and 5μm isolated space in CMOS technology is less than 5%.

Paper Details

Date Published: 19 November 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822G (19 November 2007); doi: 10.1117/12.745704
Show Author Affiliations
Jiantao Bian, Jiangsu Polytechnic Univ. (China)
Xiamen Univ. (China)
Xiang Cheng, Xiamen Univ. (China)
Chao Chen, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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