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Proceedings Paper

Theory study of AlInGaN quantum well with different barriers
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Paper Abstract

We investigate the optical gain properties of InGaN quantum well with different symmetry barriers and asymmetry barriers based on a self-consistent calculation which solves the Schrodinger equations and Poisson equations simultaneously. It is found that the AlxInyGa1-x-yN barriers which can eliminate the internal polarized field by adjusting the component x and y can improve the emission intensity in a large extent compared with other barriers. The internal polarized field is an important but not the only one factor to affect the emission power, the barrier confinement, the energy band are all have to be taken into considered. Otherwise, a quantum well which has proper asymmetry barriers also can obtain better emission efficiency than the well with symmetry barriers.

Paper Details

Date Published: 12 December 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822E (12 December 2007); doi: 10.1117/12.745602
Show Author Affiliations
Feng Wen, Huazhong Univ. of Science and Technology (China)
Univ. of Electronic Science and Technology of China (China)
Deming Liu, Huazhong Univ. of Science and Technology (China)
Lirong Huang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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