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Proceedings Paper

Quantum-dot semiconductor waveguide devices
Author(s): Z. G. Lu; J. R. Liu; S. Raymond; P. J. Poole; P. J. Barrios; S. Haffouz; D. Poitras; G. Pakulski; S. Taebi; Y. Song; X. P. Zhang; T. Hall
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Paper Abstract

We have designed, fabricated and characterized self-assembled InAs/InGaAsP QD-waveguide devices around 1.55 μm. In order to obtain optimal performance, we have investigated several QD-based semiconductor optical amplifiers (SOAs) / lasers with different core geometry and doped profiles. To make the fair comparison between QD-SOA and QW-SOA, InAs/InGaAsP QW-SOAs with the same structure and the doped profiles have been designed and characterized. The experimental results indicate the QD-SOA is much better than QW-SOA in term of optical spectral bandwidth, temperature sensitivity and output power stability. The 3-dB and 10-dB bandwidths of the amplified spontaneous emission (ASE) spectra of the QD-SOA are 150 nm and 300 nm around 1520 nm. By using CW pump and probe signals we have demonstrated a non-degenerated four-wave mixing (ND-FWM) process and the experimental results indicate that the asymmetry of the FWM conversion efficiencies is eliminated by using the QD-SOA. To make use of the inhomogeneous broadening which is one of the specific properties of QD waveguide devices, we have designed and investigated the QD-based multi-wavelength semiconductor laser. A stable multi-wavelength laser output with a 93-channel multi-wavelength laser with maximum channel intensity non-uniformity of 3-dB were demonstrated on the basis of a single InAs/InGaAsP QD F-P cavity chip. All channels were ultra-stable because of the inhomogeneous gain broadening due to statistically distributed sizes and geometries of self-assembled QDs.

Paper Details

Date Published: 19 November 2007
PDF: 7 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821Y (19 November 2007); doi: 10.1117/12.745421
Show Author Affiliations
Z. G. Lu, National Research Council Canada (Canada)
J. R. Liu, National Research Council Canada (Canada)
S. Raymond, National Research Council Canada (Canada)
P. J. Poole, National Research Council Canada (Canada)
P. J. Barrios, National Research Council Canada (Canada)
S. Haffouz, National Research Council Canada (Canada)
D. Poitras, National Research Council Canada (Canada)
G. Pakulski, National Research Council Canada (Canada)
S. Taebi, National Research Council Canada (Canada)
Univ. of Ottawa (Canada)
Y. Song, National Research Council Canada (Canada)
Concordia Univ. (Canada)
X. P. Zhang, Concordia Univ. (Canada)
T. Hall, Univ. of Ottawa (Canada)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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