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Proceedings Paper

Design and fabrication of a novel monothically integrated dual-wavelength tunable photodetector
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Paper Abstract

The design and fabrication of a Monothically integrated dual-wavelength tunable photodetector are reported. The dual-wavelength character is realized by introducing a taper substrate. The photodetector operating on long wavelength is Monothically integrated by using heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on GaAs based GaAs/AlAs Fabry-Perot filter structure, which can be tuned by thermal-optic effect. High quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. The integrated device with a dual-peak distance of 7nm (1530nm,1537nm) , a wavelength tuning range of 5.0 nm, and a 3-dB bandwidth of 5.9 GHz was demonstrated, according with the theoretical simulation.

Paper Details

Date Published: 26 November 2007
PDF: 12 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820H (26 November 2007); doi: 10.1117/12.745353
Show Author Affiliations
Jihe Lv, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Ang Miao, Beijing Univ. of Posts and Telecommunications (China)
Yiqun Li, Beijing Univ. of Posts and Telecommunications (China)
Hongwei Du, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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