Share Email Print
cover

Proceedings Paper

Loss-reduced semiconductor ring lasers based on active vertical coupler structure and two-section rectangular cavity
Author(s): R. Zhang; O. Ansell; Z. Ren; S. Yu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

InGaAsP/InP rectangular ring lasers based on active vertical coupler structure are demonstrated in terms of loss-reduction. Varied thresholds for different configuration devices with different coupling current have been measured. The smallest threshold current of 75mA has been achieved in the device with the coupler length of 300μm and coupling current of 30mA. Such variation has also been calculated assuming different fabrication loss. Their loss mechanisms have been investigated based on threshold analysis, which should benefit to further optimize loss-reduced semiconductor polygon ring lasers based on active vertical coupler structure.

Paper Details

Date Published: 19 November 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820P (19 November 2007); doi: 10.1117/12.745234
Show Author Affiliations
R. Zhang, Univ. of Bristol (United Kingdom)
O. Ansell, Univ. of Bristol (United Kingdom)
Z. Ren, Univ. of Bristol (United Kingdom)
S. Yu, Univ. of Bristol (United Kingdom)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

© SPIE. Terms of Use
Back to Top