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Proceedings Paper

Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer
Author(s): Huining Han; Fangdi Zhang; Wei Yang; Libo Cai; Min Zhang; Peida Ye
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Paper Abstract

Based on rate equations for carrier density in the active region of the QDSOA, the performance of a XOR gate using a quantum-dot semiconductor optical amplifier- based Mach-Zehnder interferometer (QDSOA-MZI) is analyzed in terms of Q factor through numerical simulations. The control pulse energy, the pulse width and the carrier capture time from the wetting layer into the dots are examined, which prove to be relevant to the Q factor. Our numerical results show that at 160Gb/s a high quality output signal with a Q factor over 5.9dB can be achieved.

Paper Details

Date Published: 19 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678237 (19 November 2007); doi: 10.1117/12.743661
Show Author Affiliations
Huining Han, Beijing Univ. of Posts and Telecommunications (China)
Fangdi Zhang, Beijing Univ. of Posts and Telecommunications (China)
Wei Yang, Beijing Univ. of Posts and Telecommunications (China)
Libo Cai, Beijing Univ. of Posts and Telecommunications (China)
Min Zhang, Beijing Univ. of Posts and Telecommunications (China)
Peida Ye, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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