Share Email Print
cover

Proceedings Paper

Fabrication of waveguides by inductively coupled plasma etching on LiNbO3/LiTaO3 single crystal film by liquid phase epitaxy growth
Author(s): Z. Ren; S. Yu; J. M. Marshall; D. Walker; P. A. Thomas
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

LiNbO3 films of 1-10μm thick were grown on z-cut LiTaO3 substrates using vanadium and boron based fluxes by liquid phase epitaxy (LPE) growth. Characterization of these films using scanning electron microscopy (SEM), electron backscattering diffraction and high-resolution X-ray diffraction (HRXRD) show that they are single-crystal and epitaxial with the substrate. Subsequently, LiNbO3 films were etched by SF6/Ar inductively coupled plasma (ICP) in order to fabricate straight ridge waveguides. Effects of parameters including working pressure, RIE power and ICP power are investigated and analyzed by measurement of etching depth, selectivity, etched surface state and sidewall profile by means of focused ion beam (FIB) etching, energy dispersive X-ray (EDX) analysis, SEM and surface profilometry. Optimized processes with high etching rates, good mask selectivity and near vertical profile have been achieved.

Paper Details

Date Published: 21 November 2007
PDF: 8 pages
Proc. SPIE 6781, Passive Components and Fiber-based Devices IV, 67812H (21 November 2007); doi: 10.1117/12.742842
Show Author Affiliations
Z. Ren, Univ. of Bristol (United Kingdom)
S. Yu, Univ. of Bristol (United Kingdom)
J. M. Marshall, Univ. of Warwick (United Kingdom)
D. Walker, Univ. of Warwick (United Kingdom)
P. A. Thomas, Univ. of Warwick (United Kingdom)


Published in SPIE Proceedings Vol. 6781:
Passive Components and Fiber-based Devices IV
Ming-Jun Li; Jianping Chen; Satoki Kawanishi; Ian H. White, Editor(s)

© SPIE. Terms of Use
Back to Top