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Proceedings Paper

Thermal and storage degradation of SiOx orienting films and its influence on NLCs alignment
Author(s): Yu. Kolomzarov; P. Oleksenko; V. Sorokin; P. Tytarenko; R. Zelinskyy
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Paper Abstract

Thermal and degradation stability of SiOx aligning films deposited by reactive cathode sputtering (RCS) in glow discharge plasma has been investigated. It is shown that heat treatment and other external factors initiate transformations on the surface of aligning film and formed new conditions on the interface. It is lead to change of easy axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways for increasing of aligning layers durability under influence of external factors has been proposed.

Paper Details

Date Published: 24 May 2007
PDF: 7 pages
Proc. SPIE 6637, XV International Symposium on Advanced Display Technologies, 663709 (24 May 2007); doi: 10.1117/12.742660
Show Author Affiliations
Yu. Kolomzarov, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
P. Oleksenko, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
V. Sorokin, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
P. Tytarenko, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
R. Zelinskyy, V. Lashkarev Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 6637:
XV International Symposium on Advanced Display Technologies

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