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Proceedings Paper

Peculiar properties of SiOx:In, Sn orienting films obtained by RCS method
Author(s): Yu. Kolomzarov; P. Oleksenko; V. Sorokin; P. Tytarenko; R. Zelinskyy
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Paper Abstract

Technology of SiOx:In,Sn aligning films deposited by reactive cathode sputtering (RCS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by RCS method for different In, Sn concentration and by poliimid rubbing method are compared. It was shown that such aligning microrelief can create defectiess and perfect on the microscopic level nematic LC oriented structures.

Paper Details

Date Published: 24 May 2007
PDF: 6 pages
Proc. SPIE 6637, XV International Symposium on Advanced Display Technologies, 663708 (24 May 2007); doi: 10.1117/12.742659
Show Author Affiliations
Yu. Kolomzarov, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
P. Oleksenko, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
V. Sorokin, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
P. Tytarenko, V. Lashkarev Institute of Semiconductor Physics (Ukraine)
R. Zelinskyy, V. Lashkarev Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 6637:
XV International Symposium on Advanced Display Technologies

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