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Proceedings Paper

Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe
Author(s): V. N. Ovsyuk; A. V. Yartsev
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Paper Abstract

The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si02 confine has a surface states density equal to 2.4 1011 cm-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.

Paper Details

Date Published: 26 April 2007
PDF: 4 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663617 (26 April 2007); doi: 10.1117/12.742637
Show Author Affiliations
V. N. Ovsyuk, Institute of Semiconductor Physics (Russia)
A. V. Yartsev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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