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Proceedings Paper

Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction
Author(s): A. Sh. Abdinov; H. M. Mamedov; S. I. Amirova
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Paper Abstract

The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd0.3Zn0.7S0.4Se0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were Voc = 0.564 V, Jsc= 1 8.7 mA/cm2, respectively.

Paper Details

Date Published: 26 April 2007
PDF: 4 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663613 (26 April 2007); doi: 10.1117/12.742615
Show Author Affiliations
A. Sh. Abdinov, Baku State Univ. (Azerbaijan)
H. M. Mamedov, Baku State Univ. (Azerbaijan)
S. I. Amirova, Baku State Univ. (Azerbaijan)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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