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Proceedings Paper

Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling
Author(s): I. I. Izhnin; V. V. Bogoboyashchyy; A. P. Vlasov; K. D. Mynbaev; M. Pociask
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Paper Abstract

Results of the studies of relaxation of electhcal properties of As- and Sb-doped CdxHg1-xTe epitaxial layers, which were converted into n-type by ion milling (TM), are presented. It is demonstrated that donor complexes, which are formed under IM and are responsible for p-to-n conductivity type conversion, are not stable, and their concentration decreases upon storage even at the room temperature. The relaxation at room temperature results in electron concentration in converted layers decreasing from the initial value of ~(2-3)x 1015 cm right after the milling down to the value of ~l015 cm-3. Increasing the temperature of the storage speeds up the relaxation. The process responsible for the relaxation appeared to be the disintegration of the donor complexes, which starts after the end of the IM and is caused by the decrease in concentration of interstitial mercury atoms, generated by milling.

Paper Details

Date Published: 26 April 2007
PDF: 8 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663612 (26 April 2007); doi: 10.1117/12.742604
Show Author Affiliations
I. I. Izhnin, R&D Institute for Materials SRC Carat (Ukraine)
V. V. Bogoboyashchyy, Kremenchuk State Polytechnical Univ. (Ukraine)
A. P. Vlasov, I. Franko Lviv National Univ. (Ukraine)
K. D. Mynbaev, A.F. Ioffe Physico-Technical Institute (Russia)
M. Pociask, Rzeszów Univ. (Poland)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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