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Proceedings Paper

HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties
Author(s): M. V. Yakushev; A. A. Babenko; V. S. Varavin; V. V. Vasil'ev; L. V. Mironova; D. N. Pridachin; V. G. Remesnik; I. V. Sabrinina; Yu. G. Sidorov; A. O. Suslyakov
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Paper Abstract

Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off λ1/2(77K) = 4.07 μm was fabricated with good photoelectric parameters.

Paper Details

Date Published: 26 April 2007
PDF: 7 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663611 (26 April 2007); doi: 10.1117/12.742600
Show Author Affiliations
M. V. Yakushev, Institute of Semiconductor Physics (Russia)
A. A. Babenko, Institute of Semiconductor Physics (Russia)
V. S. Varavin, Institute of Semiconductor Physics (Russia)
V. V. Vasil'ev, Institute of Semiconductor Physics (Russia)
L. V. Mironova, Institute of Semiconductor Physics (Russia)
D. N. Pridachin, Institute of Semiconductor Physics (Russia)
V. G. Remesnik, Institute of Semiconductor Physics (Russia)
I. V. Sabrinina, Institute of Semiconductor Physics (Russia)
Yu. G. Sidorov, Institute of Semiconductor Physics (Russia)
A. O. Suslyakov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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