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Proceedings Paper

Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe
Author(s): T. D. Aliyeva; G. D. Abdinova; N. M. Akhundova; B. Sh. Barkhalov
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Paper Abstract

The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.

Paper Details

Date Published: 26 April 2007
PDF: 3 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663610 (26 April 2007); doi: 10.1117/12.742599
Show Author Affiliations
T. D. Aliyeva, Institute of Physics (Azerbaijan)
G. D. Abdinova, Institute of Physics (Azerbaijan)
N. M. Akhundova, Institute of Physics (Azerbaijan)
B. Sh. Barkhalov, Institute of Physics (Azerbaijan)

Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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