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Proceedings Paper

Structure and photoelectric properties of Pb1-xMnxSe epitaxial films
Author(s): I. R. Nuriyev; M. B. Gadzhiyev; R. M. Sadigov; A. M. Nazarov
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Paper Abstract

The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10-4 Pa on BaF2 (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pbl-xMnxSe solid solutions with increase of manganese content.

Paper Details

Date Published: 26 April 2007
PDF: 4 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360X (26 April 2007); doi: 10.1117/12.742554
Show Author Affiliations
I. R. Nuriyev, Institute of Physics (Azerbaijan)
M. B. Gadzhiyev, Institute of Physics (Azerbaijan)
R. M. Sadigov, Institute of Physics (Azerbaijan)
A. M. Nazarov, Institute of Physics (Azerbaijan)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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