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Proceedings Paper

Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates
Author(s): A. A. Andronov; Yu. N. Nozdrin; A. V. Okomel'kov; A. A. Babenko; D. G. Ikusov; R. N. Smirnov; V. S. Varavin
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Paper Abstract

We report the experimental observation of superluminescence in the wavelength range 1 .4 - 4.5 μm from epitaxial structures Cdx4Hg1-xTe under pulsed optical pumping by Nd:YAG laser. The samples CdxHg1-xTe were grown on GaAs and Si substrates by the Molecular Beam Epitaxy. The stimulated emission has been observed from the structures at temperatures 77 - 200 K. Details of the samples, observation scheme, the super luminescence spectra are discussed.

Paper Details

Date Published: 26 April 2007
PDF: 6 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360U (26 April 2007); doi: 10.1117/12.742528
Show Author Affiliations
A. A. Andronov, Institute for Physics of Microstructures (Russia)
Yu. N. Nozdrin, Institute for Physics of Microstructures (Russia)
A. V. Okomel'kov, Institute for Physics of Microstructures (Russia)
A. A. Babenko, Institute for Physics of Semiconductors (Russia)
D. G. Ikusov, Institute for Physics of Semiconductors (Russia)
R. N. Smirnov, Institute for Physics of Semiconductors (Russia)
V. S. Varavin, Institute for Physics of Semiconductors (Russia)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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