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Proceedings Paper

Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission
Author(s): Baozhu Wang; Xiaoliang Wang; Huanming Wen; Ruihong Wu; Guoxin Hu; Junxue Ran; Hongling Xiao
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Paper Abstract

InGaN/GaN multiple quantum wells (MQWs) structure for ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition (MOCVD). The High resolution x-ray diffraction (HRXRD), atomic-force microscopy (AFM) and photoluminescence (PL) are used to characterize the structural and optical prosperities of MQWs, respectively. HRXRD shows multiple satellite peaks to 3rd order indicates the high quality of InGaN/GaN layer interface. AFM measurement shows that there are some spiral growth hillocks and 3D nanostructures on the MQWs surface. They are related with the surface kinetics or thermodynamics of InGaN growth. Temperature-dependent PL results show that there exists a clear excition-localization effect in the InGaN/GaN MQWs. The fitted σvalue of InGaN/GaN MQWs is around 8meV. The emission peak was almost unchanged with the increase PL excitation power. Those results indicate there is almost none piezoelectric field-induced quantum-confined stark effect in the InGaN/GaN MQWs due to the low In content and thin quantum well thickness.

Paper Details

Date Published: 26 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822D (26 November 2007); doi: 10.1117/12.742512
Show Author Affiliations
Baozhu Wang, Hebei Univ. of Science and Technology (China)
Institute of Semiconductors (China)
Xiaoliang Wang, Institute of Semiconductors (China)
Huanming Wen, Hebei Univ. of Science and Technology (China)
Ruihong Wu, Hebei Univ. of Science and Technology (China)
Guoxin Hu, Institute of Semiconductors (China)
Junxue Ran, Institute of Semiconductors (China)
Hongling Xiao, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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