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Proceedings Paper

Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states
Author(s): B. Witzigmann; S. Steiger; M. Tomamichel; R. Veprek; U. T. Schwarz
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Paper Abstract

In this contribution, a detailed analysis of optical gain in InGaN/GaN quantum structures with Indium content of 10% and 20% is presented. Experimental data are obtained from Hakki-Paoli characterization of edge-emitting Fabry-Perot lasers. A gain model that includes many-particle effects on a microscopic level, as well as combined quantum-well and quantum-dot density of states, is used to explain the experimental findings. Inhomogeneous broadening arising from local Indium clusters is included via a statistical fluctuation of the electronic density of states. Excellent agreement is obtained for the characteristic gain spectra from structures emitting at 405nm (10% In content) and 470nm (20% In content), and a systematic analysis of the microscopic physics shows signature of quantum-dot states.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820R (19 November 2007); doi: 10.1117/12.742462
Show Author Affiliations
B. Witzigmann, ETH Zürich (Switzerland)
S. Steiger, ETH Zürich (Switzerland)
M. Tomamichel, ETH Zürich (Switzerland)
R. Veprek, ETH Zürich (Switzerland)
U. T. Schwarz, Univ. of Regensburg (Germany)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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