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Proceedings Paper

The spectral feature analysis of semiconductor thin disk laser
Author(s): Chun-feng He; Li Qin; Jun Li; Li-wen Cheng; Xue-mei Liang; Yong-qiang Ning; Li-jun Wang
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Paper Abstract

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power, the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger, the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs, This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.

Paper Details

Date Published: 13 December 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820E (13 December 2007); doi: 10.1117/12.742427
Show Author Affiliations
Chun-feng He, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of Chinese Academy of Sciences (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Jun Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of Chinese Academy of Sciences (China)
Li-wen Cheng, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of Chinese Academy of Sciences (China)
Xue-mei Liang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of Chinese Academy of Sciences (China)
Yong-qiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li-jun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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