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Proceedings Paper

Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs
Author(s): A. Lastras-Martínez; I. Lara-Velázquez; R. E. Balderas-Navarro; J. Ortega-Gallegos; L. F. Lastras-Martínez
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Paper Abstract

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 °C and 430 °C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 1016 - 1019 cm-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions.

Paper Details

Date Published: 16 May 2007
PDF: 8 pages
Proc. SPIE 6422, Sixth Symposium Optics in Industry, 64221H (16 May 2007); doi: 10.1117/12.742363
Show Author Affiliations
A. Lastras-Martínez, Univ. Autónoma de San Luis Potosí (Mexico)
I. Lara-Velázquez, Univ. Autónoma de San Luis Potosí (Mexico)
R. E. Balderas-Navarro, Univ. Autónoma de San Luis Potosí (Mexico)
J. Ortega-Gallegos, Univ. Autónoma de San Luis Potosí (Mexico)
L. F. Lastras-Martínez, Univ. Autónoma de San Luis Potosí (Mexico)

Published in SPIE Proceedings Vol. 6422:
Sixth Symposium Optics in Industry

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