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Proceedings Paper

Photodiodes based on Pb1-xSnxSe epitaxial films
Author(s): Ch. D. Jalilova; A. A. Aliyev; N. V. Faradjev; Sh. M. Alekperova
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Paper Abstract

The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb1-xSnxSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (NGaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (Eg), temperature coefficient of Eg are calculated. The conditions of preparing metal - Pb1-xSnxSe photodiode structures are determined and capacity temperature dependence of metal - Pb1-xSnxSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.

Paper Details

Date Published: 26 April 2007
PDF: 4 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360E (26 April 2007); doi: 10.1117/12.742325
Show Author Affiliations
Ch. D. Jalilova, Institute of Physics (Azerbaijan)
A. A. Aliyev, Institute of Physics (Azerbaijan)
N. V. Faradjev, Institute of Physics (Azerbaijan)
Sh. M. Alekperova, Institute of Physics (Azerbaijan)


Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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