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Proceedings Paper

High-speed photodiodes for 2.0-4.0 µm spectral range
Author(s): Yu. P. Yakovlev; I. A. Andreev; S. S. Kizhayev; E. V. Kunitsyna; M. P. Mikhailova
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Paper Abstract

This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise and speed-response characteristics were studied. In addition to high-speed response and low noise level these photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser rangefinding systems, the free-space optical link as well as systems of optical fiber communication.

Paper Details

Date Published: 26 April 2007
PDF: 13 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360D (26 April 2007); doi: 10.1117/12.742322
Show Author Affiliations
Yu. P. Yakovlev, Ioffe Physical-Technical Institute (Russia)
I. A. Andreev, Ioffe Physical-Technical Institute (Russia)
S. S. Kizhayev, Ioffe Physical-Technical Institute (Russia)
E. V. Kunitsyna, Ioffe Physical-Technical Institute (Russia)
M. P. Mikhailova, Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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