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Proceedings Paper

Radiation-proof photodetectors for spectral region 0.35÷1.1 µm
Author(s): K. A. Askerov; M. G. Bektashi; V. I. Gadzhiyeva; D. Sh. Abdinov
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Paper Abstract

Article is devoted to development and research of radiation resistance of photodiodes on the basis of layered compounds ЭaCe, БlHCe, ЭaTe intended for visible and near IR-region of a spectrum and the process of diffusion of various impurity in layered semiconductors. It is shown that in new manufacturing techniques of photodiode structures initial materials ЭaCe, ЭaTe and БlHCe were exposed to influence ionizing irradiations at small fluences, and then on them processes of diffusion of compensating elements with preliminary annealing were made. Specified changes in technology of reception of photosensitive elements have allowed to receive photodiode structures with more than five elements. Radiation resistance of the researched photodiodes have been determined and the opportunity of their use under conditions of high radiation is revealed.

Paper Details

Date Published: 26 April 2007
PDF: 4 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360C (26 April 2007); doi: 10.1117/12.742320
Show Author Affiliations
K. A. Askerov, Institute of Physics (Azerbaijan)
M. G. Bektashi, Institute of Physics (Azerbaijan)
V. I. Gadzhiyeva, Institute of Physics (Azerbaijan)
D. Sh. Abdinov, Institute of Physics (Azerbaijan)

Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices

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