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Proceedings Paper

Radiation damage, range distribution and site location measurements by channeling technique for Ar, Kr, Xe in Ni after implantation and annealing
Author(s): G. D. Tolstolutskaya; I. E. Kopanetz; I. M. Neklyudov
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Paper Abstract

By the methods of channeling and mathematical simulation the distribution profiles of damage produced in Ni under irradiation by ions of He+, Ar+, Kr+, , Xe+ with energy 0.2-1 MeV in the range of doses 1015 ÷ 1017 cm-2 are investigated. Location of the implanted atoms of Xe in a Ni monocrystal lattice is determined; their interaction with radiation defects, kinetics of impurity complexes formation and their configuration are defined.

Paper Details

Date Published: 2 May 2007
PDF: 9 pages
Proc. SPIE 6634, International Conference on Charged and Neutral Particles Channeling Phenomena II, 66340W (2 May 2007); doi: 10.1117/12.741916
Show Author Affiliations
G. D. Tolstolutskaya, National Science Ctr. Kharkov Institute of Physics and Technology (Ukraine)
I. E. Kopanetz, National Science Ctr. Kharkov Institute of Physics and Technology (Ukraine)
I. M. Neklyudov, National Science Ctr. Kharkov Institute of Physics and Technology (Ukraine)


Published in SPIE Proceedings Vol. 6634:
International Conference on Charged and Neutral Particles Channeling Phenomena II

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