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Proceedings Paper

Optical bistability of layer semiconductors in the exciton absorption region
Author(s): Claudia Yu. Zenkova; Valerij M. Kramar; Natallya K. Kramar
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Paper Abstract

The theoretical investigation of the role of bending waves in the process of creating conditions for observing optical bistability in layer semiconductors was performed by the Green function method. Using the 2H-polytype of Pb12 as an example. we showed that effective exciton scattering by oscillations of this type leads to a short wave shift of the frequency tegion. the decrease of its sizes. the widening of the temperature interval optical bistability realization of its observing, the shill the hysteresis loop into bigger intensities and the decrease of its height and width.

Paper Details

Date Published: 8 May 2007
PDF: 8 pages
Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350F (8 May 2007); doi: 10.1117/12.741881
Show Author Affiliations
Claudia Yu. Zenkova, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Valerij M. Kramar, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Natallya K. Kramar, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 6635:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III

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