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Proceedings Paper

Absorption and photoluminescence of Ga-La-S:O and Ga-Ge-As-S glasses doped with rare-earth ions
Author(s): M. S. Iovu; A. M. Andries; N. N. Syrbu; A. B. Seddon; D. Furniss; G. J. Adriaenssens; Yu. S. Tver'yanovich
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Paper Abstract

The visible luminescence from Pr3+, Dy3+, Nd3+, Sm3+ and co-doped with Ho3+ and Dy3+ ions embedded in Ga0.017Ge0.25As0.083S0.65 glass hosts at room temperature and at T10 K is reported, when pumping with an Ar+-ion laser at lambda=488 nm. Fluorescence emissions at 1 .3 &mgr; was observed for Dy3+ and both at 1.3 and at 1.5 &mgr; for Pr3+ doped glasses with wavelength pumping at 950 nm. The emission bands correlate with the absorption bands characteristic for the electronic transitions of the rare-earth ions. Energy transfer from Ho3+: 5F3 level to Dy3+:4F9/2 level increase the visible emission efficiency at 650 nm in the co-doped glasses. The emission spectra correlate with the absorption spectra of the investigated glasses. The investigated Ga0.017Ge0.25As0.083S0.65 glasses doped with Pr3+ are promising materials for optical fibers amplifiers operating at 1300 and 1500 nm telecommunication windows. The effect of oxygen on the absorption and luminescence spectra of Pr3+-doped Ga-La-S-O (GLS) glasses with a constant cationic ratio Ga/La=O.7/O.3 and varying both oxygen (0.65 and 2.95 wt %) and praseodymium (0. 1 and 1 .0 wt %) content also are presented.

Paper Details

Date Published: 31 May 2007
PDF: 9 pages
Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 663505 (31 May 2007); doi: 10.1117/12.741858
Show Author Affiliations
M. S. Iovu, Ctr. of Optoelectronics, IAP (Moldova)
A. M. Andries, Ctr. of Optoelectronics, IAP (Moldova)
N. N. Syrbu, Ctr. of Optoelectronics, IAP (Moldova)
A. B. Seddon, Univ. of Nottingham (United Kingdom)
D. Furniss, Univ. of Nottingham (United Kingdom)
G. J. Adriaenssens, Univ. of Leuven (Belgium)
Yu. S. Tver'yanovich, St. Petersburg State Univ. (Russia)


Published in SPIE Proceedings Vol. 6635:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III

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