Share Email Print
cover

Proceedings Paper

InGaN based high efficiency LED
Author(s): Eun-Hyun Park; Soo-Kun Jeon; Chang-Tae Kim; Dong-Hwan Kim; Jung-Seo Park
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Key points for high efficiency LED are reviewed as internal and external structure. Then, the effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN MQW-LED is explained with specially designed dual wavelength LEDs. The result verifies that the hole carrier transport is easily blocked by the silicon doped barrier, and the dominant electron and hole recombination occurs at the wells between p-GaN and the silicon doped barrier.

Paper Details

Date Published: 14 September 2007
PDF: 7 pages
Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66690J (14 September 2007); doi: 10.1117/12.741754
Show Author Affiliations
Eun-Hyun Park, EpiValley Co., Ltd. (South Korea)
Soo-Kun Jeon, EpiValley Co., Ltd. (South Korea)
Chang-Tae Kim, EpiValley Co., Ltd. (South Korea)
Dong-Hwan Kim, EpiValley Co., Ltd. (South Korea)
Jung-Seo Park, EpiValley Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6669:
Seventh International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

© SPIE. Terms of Use
Back to Top